Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• coating ensures a strong SE contrast with the carbon deposit due to its significantly higher SE yield, and it prevents the eventual electron beam-induced decomposition of the native oxide layer of the Si substrate. For the carbon deposition, dodecane was used as a precursor. For FEBIE, water was chosen as

• within which SE2 are created is larger in the Si substrate than in the C deposit (2.7 and 1.6 μm, respectively [24]). Note that the thin Au–Pd and Ti coating is ignored here, as most of the interaction volume will be in the underlying Si substrate at 20 keV. Therefore, the width of the distribution of SE

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• comparison with the work by Vigonski et al. [27] who used the same Ag NWs and heating methods for heat-treatment experiments of a flat Si substrate. Two heating schemes were implemented: In the scheme 1 (Figure 2), heating was applied in 10 min cycles at fixed temperatures followed by cooling to room

• thermal expansion of Ag NWs and a substrate during heat treatment from room temperature to 673.15 K were simulated by FEM in Comsol Multiphysics 5.6. The structural configuration involved a pentagonal Ag NW positioned above a rectangular hole on an Si substrate. The NW was securely affixed to the

• substrate, while the overhanging segment retained freedom of movement in all directions. The elastic modulus values for the Ag NW and Si substrate were set to the built-in values in Comsol, accounting for their temperature-dependent nature. More technical details can be found in Supporting Information File

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• . Experimental Piezoresistance measurements NCG was synthesized on a 300 nm SiO2/Si substrate by spin coating S1805 (1:10 dilution with propylene glycol methyl ether acetate, PGMEA) at 4000 rpm. The spin-coated Si/SiO2 substrate was loaded in a vacuum furnace and annealed at 600 °C for 10 h at 10−6 mbar. The

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• vertically patterned magnetic nanowires on a Si substrate. With this approach we fabricated three-dimensional nanowire-based spin valve devices without the need of complex etching processes or additional spacer coating. Through this method, we successfully obtained NiCu/Cu multilayered nanowire arrays with a

• fabricated through a newly developed method, which enables to selectively deposit the magnetic nanowires on the Si substrate and to fabricate three-dimensional (3D) devices contacting a few or even single nanowires without complex etching processes [17] or additional spacer coating [18][19]. Results and

• Discussion The AAO template was fabricated by directly anodizing a ca. 1 µm thick aluminum (Al) film on a silicon (Si) substrate covered with 200 nm SiO2 and patterned Ti/Au (5/50 nm) bottom electrodes. It has pores with a diameter of around 35 nm, an interpore distance of around 50 nm, and a height of

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• transport through the same. The I–V characteristics were recorded with a positive bias applied to the p-Si substrate. Figure 6a and Figure 6b show, respectively, the semi-log I–V curves (linear I–V curves are presented in Figure S4 of Supporting Information File 1) of WOx/p-Si heterostructures before and

• regarded as an interlayer between the p-Si substrate and the Ag electrode. The glancing angle (87°) growth of a 6 nm film is likely to sustain a large number of metal (Ag)-induced gap states at the NS-WOx/p-Si interface, leading to Fermi level pinning, the degree of pinning being directly related to film

• damage of the underlying Si substrate, which is otherwise prominent in case of DC sputtering, commonly adopted for WOx growth under GLAD configuration. For a better assessment of the present work and existing literature, a table of comparison (Table S1) is provided in Supporting Information File 1

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• evaluation of the temperature of MoS2 flakes prepared in different ways and that of the Si substrate as functions of the laser power impinging on the sample through a 100× objective (N.A. 0.9). The power was cycled between ≈5 μW and ≈2 mW. The temperature of MoS2 flakes is evaluated from the Stokes/anti

• discussed in this paper were recorded at an excitation wavelength of 532 nm, with a laser working-power close to 0.1 mW, and using a 100× objective (N.A. 0.9), on MoS2 flakes or thin films deposited on SiO2/Si substrate with a SiO2 thickness of 90 ± 6 nm. Application of Raman criteria to characterize MoS2

• contaminations or deposition of others species would have a different impact on the Raman intensity coming from MoS2 in the film and on the one coming from the Si substrate underneath the deposited thin film. It is, thus, expected that the measurements on contaminated or highly defective MoS2 thin films will

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• meets the Si substrate. The FEM model gives the distribution of strain at the surface. Figure 2a shows the distribution of longitudinal strain εxx(x, y) for the fundamental bending mode of interest. The strain is normalized to its maximum value at the center of the clamping line. Figure 2b displays this

• 60 s. With the front side of the wafer protected, we flip over the wafer and etch through the Si-N using the same CHF3/SF6 process as in step (f) and the etch mask defined in step (c). We then use a Bosch process to etch through most of the Si substrate (approximately 450 μm deep) with an etch rate

• etch under the triangular silicon nitride plate and form a very straight clamping line to the Si substrate. However, the KOH etch is slow compared to the isotropic RIE process and attacks the Nb-Ti-N superconducting film. An additional lithography step was needed to protect the superconducting circuit

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• estimated by the analysis of the D/G line intensity ratio [29][30]. Spectra of the underlying SiO2/Si substrate (red line), nonexposed (green line), and exposed graphene flakes (blue line) are collected in Figure 2D. Most of the graphene flake remains unaltered – the G/2D ratio is close to ½ as expected for

• . Complementary studies performed using both in situ and ex situ AFM reveal the modification in SiO2/Si substrate topography. Our results are important not only for applications of water-assisted FEBIE to etching carbon allotropes and SiO2 materials but also in other fields. For example, where electron-driven

• measurements of the etched lines on the SiO2/Si substrate as a function of the dwell time: A) AFM profiles of lines etched with different dwell times (td = 1, 10, and100 μs); B) 3D AFM image of the SiO2 surface. Exposure time and dose values for the etched lines. Author Contributions The manuscript was

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• of the antenna array is 340 µm in both directions for 210 and 240 GHz channels. The frequency response of the two-frequency receiving matrix with a Si substrate thickness of 260 µm is shown in Figure 2 (solid curves). To compare the calculated response with the experimental results, we also added

• curves for a Si substrate thickness of 290 µm (dashed curves). As a result of frequency response optimizations, the following characteristics were obtained: The bandwidth for the 210 GHz channel at half power level is 25.46 GHz, and the maximum absorption occurs at a frequency of 212.1 GHz; the bandwidth

• of frequency bands between arrays of antennas can be seen. We should note here that a certain frequency shift of the channels is due to improper Si substrate thickness (available in the clean room at that time), which was about 0.29 mm instead of the optimized 0.26 mm (see modelling results in Figure

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• , we initially fabricated the nanostructures on a 200 µm thick Si substrate with 100 nm thick SiN buffer layers on both sides. The buffer layers were deposited with low-pressure CVD to ensure stress-free films. The fabrication process is shown in Figure 10. First, we made the nanostructure using lift

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• S2a). In contrast to the Au/mica surface, the Au/Si substrate exhibits a rougher surface, as seen in Figure 2c, in agreement with the difference in growth mode of Au films on the two substrates. For mica, epitaxial growth is obtained [16][17], while Au on Si/SiO2 forms a granular film [18]. Although

• presents measurements of DDT SAMs on a Au/Si substrate. Comparing topography (Figure 4a) and current map (Figure 4b) to the ones of the bare Au/Si substrate, close similarities can be seen. After coverage of the surface by the SAM, the surface retains the same roughness with only small flat areas. Although

• variation in the current is governed by the structure of the substrate, which remains qualitatively unchanged by the deposition of the SAM. For the Au/Si substrate, the rough topography yields only small areas on the surface on which comparable conductive properties can be expected. Without information on

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• membrane with a maximum of 946 pm, while decreasing to a few picometers at the side edges. The decay of displacement from the center to the edge is expected from the clamping effect at the edges, where the Si substrate is thicker [38]. The measured CPD shift in Figure 3b indicates that the photovoltage

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• , we assumed the same Ag layer thickness of 215 ± 7 nm for all samples, equivalent to the thickness of the Ag layer deposited on a flat Si substrate at room temperature. The given thickness corresponds to the amount of deposited Ag determined by the number of laser pulses and does not reflect changes

A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon

• Xiaojun Zhu,
• Shuai Li,
• Ang Sun,
• Yongquan Pan,
• Wen Liu,
• Yue Wu,
• Guoan Zhang and
• Yuechun Shi

Beilstein J. Nanotechnol. 2023, 14, 478–484, doi:10.3762/bjnano.14.38

• waveguide with a focusing subwavelength grating MIR grating coupler, the difficulty of preparation has been considerably reduced. Principle and Design Figure 1a shows the tilted view of the proposed MIR FGC. The Ge waveguide layer is built onto the Si substrate forming the Ge-on-Si structure. The proposed

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• potential), the lifetime has been reported to be less than 5 × 10−6 s. These results indicate that the cutoff frequency fc of carrier transport between the interface and bulk states for a Si substrate with a low carrier density is approximately 200 kHz. Therefore, when an AC bias voltage with a frequency

• . Results and Discussion First, we performed AFM/KPFM measurements on the pn-patterned Si surface to identify the dopant regions on the semiconductor surface. Figure 6a and Figure 6b show the topographic and CPD images of the pn-patterned Si substrate, respectively. The CPD image in Figure 6b was obtained

• a width of approximately 1 μm and a height of approximately 60 nm. Compared with the data of the pn-patterned Si substrate in Figure 5, these rodlike protrusions correspond to p-type or n-type regions, and the low areas between the rodlike protrusions correspond to n+-type regions. From the CPD

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• . It has been reported after the annealing of Au thin films deposited on SiO2/Si substrates with different thicknesses of the SiO2 layer [3][4][36]. The active oxidation of Si also occurs once the Si substrate is exposed [2][3][37], which can be proved by the calculated oxygen partial pressure

• decomposition cavities. The active oxidation of Si also happens once the Si substrate is exposed [2][3][37]. Both decomposition and active oxidation can produce volatile SiO gas as the Si vapor source for the formation of SiOx NWs based on VLS mechanism [2][26][27][51][52]. Several NWs nucleate and then grow

• similar annealing parameters [3], which further proves the higher ability of Au, compared to Ni, to enhance the SiO2 decomposition. The cavities keep growing laterally after piercing vertically the SiO2 layer and exposing the Si substrate [39][53][54]. Then, structures around the border of cavities will

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

• Roger Cattaneo,
• Mikhail A. Galin and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

• in the reverse branch of the I–V characteristics for both arrays. As shown in [9][34], they are caused by propagation of surface plasmon-type EMWs along the Nb electrode–Si substrate interface. These steps appear when the Josephson frequency coincides with one of the cavity mode frequencies

Induced electric conductivity in organic polymers

• Konstantin Y. Arutyunov,
• Anatoli S. Gurski,
• Vladimir V. Artemov,
• Alexander L. Vasiliev,
• Azat R. Yusupov,
• Danfis D. Karamov and
• Alexei N. Lachinov

Beilstein J. Nanotechnol. 2022, 13, 1551–1557, doi:10.3762/bjnano.13.128

• of the PDP polymer solutions. For example, Figure 2b shows the topography of the polymer film 0.1 wt % on Si substrate. The plot at the bottom demonstrates the variation of the structure along the line, depicted at the upper panel. The distance between the measuring lines is of the order of the

• strip and the whole sandwich itself. (b) Atomic force microscope scan of a PDP film 0.1 wt % on Si substrate. The plot at the bottom illustrates the roughness of the surface along the indicated line. (c) Side view of a Pb–PDP–Pb structure on glass with solitary defect (lead shortcut) obtained by

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

• Arbresha Muriqi and
• Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

• significant drawback [38]. Fumaric acid (FC) is another alcohol organic precursor that was used to deposit titanicone films using TiCl4 on an Si substrate in a temperature range of 180 °C to 350 °C. A temperature-dependent growth characteristic was observed with the growth rate decreasing from 1.10 Å/cycle at

• Ti(DMA)4 in the next cycle and the growth proceeds. Calculations energetics suggest that organic molecules EG and GL combined with Ti(DMA)4 in a anatase TiO2, rutile TiO2 and Al2O3 surface behave similarly as when combined with Ti(DMA)4 on a Si substrate [33]. Experimental data in ref [33] show that

• for Ti(DMA)4–EG films deposited on a Si substrate in a temperature range of 80–150 °C the growth starts but it stops after 5–10 cycles, and this most probably due to the favourable double reactions of EG molecules with the Ti species. For Ti(DMA)4–GL films the growth proceeds even when the molecule

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• up with a target substrate (SiO2/Si wafer). The sample was dried in a vacuum chamber (ca. 10−4 Torr) at room temperature for 2 h. For PMMA removal, the entire sample was vertically dipped into an acetone bath for 4 h. After that, the exposed graphene on a SiO2/Si substrate was again vertically dipped

Revealing local structural properties of an atomically thin MoSe₂ surface using optical microscopy

• Lin Pan,
• Peng Miao,
• Anke Horneber,
• Alfred J. Meixner,
• Pierre-Michel Adam and
• Dai Zhang

Beilstein J. Nanotechnol. 2022, 13, 572–581, doi:10.3762/bjnano.13.49

• local structural properties on the Raman enhancement at 2D-TMDC monolayer surfaces. Results In this work, triangular MoSe2 flakes were chemically synthesized on a precleaned Si substrate coated with a thermally grown layer of SiO2. To investigate the Raman enhancement effect on a MoSe2 flake, we choose

• in Figure 1b are high-resolution AFM images of CuPc/MoSe2. The upper inset exhibits a step from the SiO2/Si substrate to the border of the MoSe2 flake, and the lower inset shows a distinct transition from the border to the center of the MoSe2 flake. The MoSe2 flake is fully covered by CuPc molecule

• aggregations, while on the SiO2/Si substrate some CuPc molecules aggregated to a rod-like particle, which has been also reported in the literature [24]. The height profile marked by the dashed white line in Figure 1b is visualized in Figure 1c. It suggests that the center of the MoSe2 flake is slightly thinner

Open-loop amplitude-modulation Kelvin probe force microscopy operated in single-pass PeakForce tapping mode

• Gheorghe Stan and
• Pradeep Namboodiri

Beilstein J. Nanotechnol. 2021, 12, 1115–1126, doi:10.3762/bjnano.12.83

• substrate (Bruker Nano Surfaces, Santa Barbara, CA, USA); the metal regions are separated by trenches that expose the Si substrate at their bottom. Figure 1a shows the AFM topographical image of one of these trenches, bordered by Au (left) and Al (right). The CPD maps over the sample were obtained first by

• electrical [57][58], chemical [59], optical [60][61], and mechanical [62][63] measurements. Results and Discussion Closed-loop KPFM measurements in two-pass PFT mode The new OL AM-KPFM implementation was tested on a commercially available sample consisting of large Au and Al metal regions deposited on a Si

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• their sizes [92]. Generally, a QD-based EML is sandwiched between a polymer-based ETL and HTL. Carbon-based nanomaterials such as SWNT have also been investigated as EML in OLED. Firstly, a SWNT p–n junction on a Si substrate has been investigated by Lee et al. [93]. Further, Mueller et al., with some

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• /H2O (1:10) solution for eliminating the oxide layer and impurities from the surfaces. An ohmic contact with low resistance was made by evaporation of aluminium (Al, 99.999% from Kurt J. Lesker) with a thickness of 150 nm at 5 × 10−6 Torr on the back side of the p-type Si substrate and subsequent

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• a 180 μm thick p-type Si substrate. Further cost reduction requires the use of a thinner Si substrate/absorber. Thus, in this paper we report photovoltaic results for a 50 μm thick Si absorber. Experimental Silicon preparation The p-type silicon wafer with thickness of 50 μm and a diameter of 5 cm

• large angles between cell and light source. The magnesium-doped zinc oxide films exhibited grain growth mode on sample B. Close to the silicon surface, only small grains were grown initially. The size of the MZO grains varies but does not exceed a value of 50 nm. Then (for larger distances from the Si

• substrate), the growth mode is similar to that observed for sample A. However, the size of the columns is smaller and does not exceed 100 nm in width. In the tested samples, a microcrystalline structure of the MZO film was detected. Our previous research proved the monocrystalline quality of ZnONR [15